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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4980
DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg
TOR NDU ICO E SEM ANG INCH
PARAMETER CONDITIONS VALUE 100 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 5 Collector current-Peak 10 Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 1.5 2 25 150 -55~150
UNIT V V V A A A A W ae ae
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4980
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated volatge IC=2.5A ; VCE=2V IC=0.5A ; VCE=10V 70 50 0.1 mA 0.1 mA CONDITIONS IC=50mA ;IB=0 IC=2.5A; IB=0.13A IC=2.5A; IB=0.13A MIN 80 0.3 1.2 TYP. MAX UNIT V V V
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO
Switching times ton ts tf
NDU ICO E SEM ANG INCH
Turn-on time Storage time IC=2.5A;IB1=0.25A IB2=0.25A ,RL=12| VBB2=4V Fall time
TOR
0.3 1.5 0.2
MHz
|I |I |I
s s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4980
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm)
3


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